• DocumentCode
    2320002
  • Title

    Properties of PE-CVD DLC films as field electron emitters prepared in different regimes

  • Author

    Evtukh, A.A. ; Litovchenko, V.G. ; Klyui, N.I. ; Marchenko, R.I. ; Kudzinovski, S.Yu.

  • Author_Institution
    Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
  • fYear
    1998
  • fDate
    19-24 July 1998
  • Firstpage
    232
  • Lastpage
    233
  • Abstract
    The use of silicon tip emitters coated with diamond-like carbon (DLC) films allows one to combine the advantages of Si emitters and the unique properties of DLC films. The low electron affinity, chemical and mechanical endurance, and high thermal conductivity of DLC films improve the emission parameters of Si emitters. The DLC films can be formed at low temperature, are flat and their properties can be controlled with growth conditions. Previous results on DLC coatings, demonstrated very substantial enhancement of the field emission, but their hardness and stability still have to be improved. In this work the influence of the diamond-like carbon (DLC) films deposited in different conditions on electron field emission of silicon tips have been investigated.
  • Keywords
    amorphous semiconductors; carbon; electron field emission; elemental semiconductors; plasma CVD coatings; silicon; C-Si; PE-CVD DLC films; diamond-like carbon; field electron emitters; Chemicals; Coatings; Conductive films; Diamond-like carbon; Electron emission; Electron guns; Semiconductor films; Silicon; Temperature control; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 1998. Eleventh International
  • Conference_Location
    Asheville, NC, USA
  • Print_ISBN
    0-7803-5096-0
  • Type

    conf

  • DOI
    10.1109/IVMC.1998.728734
  • Filename
    728734