DocumentCode
2320173
Title
A comparative study of electron emission characteristics of silicon tip arrays with and without amorphous diamond coating
Author
She, J.C. ; Huq, S.E. ; Chen, J. ; Deng, S.Z. ; Xu, N.S.
Author_Institution
Dept. of Phys., Zhongshan Univ., Guangzhou, China
fYear
1998
fDate
19-24 July 1998
Firstpage
253
Lastpage
254
Abstract
Details are given of experiments carried out to compare the field electron emission characteristics of single crystal silicon tip arrays with and without amorphous diamond coating. The coatings on the tip arrays were prepared using filtered vacuum arc plasma deposition technique. The morphology of the coating was studied in a scanning electron microscope. An anode probe technique was employed to measure the I-V characteristics, stability and turn-on fields of the tip-array emitters before and after coating. It has been found that the coating has effects not only on enhancing emission, but also stabilizing it. The physical reason for these effects is discussed.
Keywords
diamond; electron field emission; elemental semiconductors; plasma deposited coatings; scanning electron microscopy; silicon; vacuum microelectronics; Si-C; amorphous diamond coating; field electron emission; filtered vacuum arc plasma deposition; scanning electron microscopy; single crystal silicon tip array; Amorphous materials; Coatings; Electron emission; Morphology; Plasma measurements; Plasma properties; Plasma stability; Silicon; Vacuum arcs; Vacuum technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location
Asheville, NC, USA
Print_ISBN
0-7803-5096-0
Type
conf
DOI
10.1109/IVMC.1998.728744
Filename
728744
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