Title :
Terahertz wave generation using the Doppler effect in photoexcited semiconductors
Author :
Bae, Jongsuck ; Suzuki, Sho ; Nawa, Shintaro
Author_Institution :
Dept. of Eng. Phys., Electron. & Mech., Nagoya Inst. of Technol., Nagoya, Japan
Abstract :
Doppler frequency up conversion using optically generated electron-hole plasma in a planar transmission line has been investigated as a potential means for generating high power terahertz waves. Experiments performed at millimeter wavelengths have clearly proved that the Doppler frequency conversion with a frequency up conversion ratio of more than five can be achieved in a slotline with an optically excited silicon substrate.
Keywords :
Doppler effect; elemental semiconductors; optical frequency conversion; photoexcitation; silicon; solid-state plasma; terahertz wave generation; Doppler effect; Doppler frequency up conversion; Si; millimeter wavelengths; optically excited silicon substrate; optically generated electron-hole plasma; photoexcited semiconductors; planar transmission line; terahertz wave generation; Doppler effect; Frequency conversion; Optical frequency conversion; Planar transmission lines; Plasma waves; Power generation; Silicon; Slotline; Substrates; Wavelength conversion;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
Conference_Location :
Busan
Print_ISBN :
978-1-4244-5416-7
Electronic_ISBN :
978-1-4244-5417-4
DOI :
10.1109/ICIMW.2009.5324957
