Title :
A study of influence of interface on field emission from diamond films
Author :
Yuan, G. ; Ji, H. ; Zhou, T.M. ; Jiang, H. ; Zhao, H.F. ; Wang, Y.Z. ; Wang, W.B. ; Jin, C.C. ; Jin, Y.X.
Author_Institution :
Inst. of Phys., Acad. Sinica, Changchun, China
Abstract :
Diamond films were deposited on n-type, p-type and p+ silicon wafers, and field emission was measured at high vacuum. The emission from diamond deposited on p-type silicon substrates shows two steps in I-V plots, and effective work function in high field region is lower than that in low field. These results are attributed to the effect of p-n junction between diamond and silicon substrates.
Keywords :
diamond; electron field emission; p-n junctions; thin films; work function; C-Si; I-V characteristics; diamond film; field emission; interface; p-n junction; silicon substrate; work function; Chemicals; Conductive films; Electron emission; Mechanical factors; Metal-insulator structures; Semiconductor films; Silicon; Substrates; Thermal conductivity; Tunneling;
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
DOI :
10.1109/IVMC.1998.728745
