Title :
A 5.8 GHz OFDM GaAs MESFET MMIC chip set
Author :
Yoo, S. ; Heo, D. ; Lee, C.-H. ; Matinpour, B. ; Chakraborty, S. ; Laskar, J.
Author_Institution :
Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
This paper presents the implementation of a 5.8 GHz GaAs MESFET MMIC transceiver chip set compatible with the OFDM standard. The receiver is designed for low noise figure and high IIP3. The transmitter is designed to satisfy high peak-to-average power ratio. This design matches closely with the requirements for 5.8 GHz wireless LAN applications. To the best of our knowledge, this research represents the first reported implementation of the OFDM standard at 5.8 GHz.
Keywords :
Gallium arsenide; III-V semiconductors; Integrated circuit noise; MESFET integrated circuits; MMIC; OFDM modulation; Transceivers; Wireless LAN; 5.8 GHz; GaAs; IIP3; MESFET MMIC chip set; OFDM; noise figure; peak-to-average power ratio; transceiver; wireless LAN applications; Gallium arsenide; High power amplifiers; Linearity; MESFETs; MMICs; OFDM; Peak to average power ratio; Power amplifiers; Transmitters; Wireless LAN;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.861752
