DocumentCode :
2320385
Title :
2002 International Conference on Molecular Beam Epitaxy (Cat. No.02EX607)
fYear :
2002
fDate :
15-20 Sept. 2002
Abstract :
Conference proceedings front matter may contain various advertisements, welcome messages, committee or program information, and other miscellaneous conference information. This may in some cases also include the cover art, table of contents, copyright statements, title-page or half title-pages, blank pages, venue maps or other general information relating to the conference that was part of the original conference proceedings.
Keywords :
Ge-Si alloys; molecular beam epitaxial growth; nanotechnology; optoelectronic devices; quantum cascade lasers; semiconductor growth; wide band gap semiconductors; Ge-Si; MBE growth; SiGe heterostructures; antimonide; long wavelength optoelectronic devices; nanopatterning; quantum cascade lasers; self-assembled low-dimensional structures; semiconductor spintronics, heterointerfaces; wide bandgap nitrides;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
Type :
conf
DOI :
10.1109/MBE.2002.1037730
Filename :
1037730
Link To Document :
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