Molecular beam epitaxy and properties of ferromagnetic III-V semiconductors

Author

Ohno, Hideo

Author_Institution

Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

9

Lastpage

10

Abstract

Owing to the nonmagnetic nature of III-V compounds magnetic cooperative phenomena were not a part of the rich soil of III-V heterostructures in the past. The synthesis of magnetic III-V semiconductors and subsequent discovery of carrier-induced ferromagnetism in them now allows us to combine ferromagnetism with the properties of III-V heterostructures. Here, I describe molecular beam epitaxy of ferromagnetic III/V´s, a mean-field model for the carrier-induced ferromagnetism in them, and isothermal and reversible electric field control of carrier-induced ferromagnetism in a ferromagnetic semiconductor (In,Mn)As.

Keywords

III-V semiconductors; ferromagnetic materials; indium compounds; magnetic semiconductors; magnetisation; manganese compounds; molecular beam epitaxial growth; (In,Mn)As; (InMn)As; carrier-induced ferromagnetism; ferromagnetic III-V semiconductors; isothermal electric field control; mean-field model; molecular beam epitaxy; properties; reversible electric field control; synthesis; Gallium arsenide; Hall effect; III-V semiconductor materials; Insulation; Magnetic semiconductors; Magnetization; Molecular beam epitaxial growth; Substrates; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037734

Filename

1037734