Molecular beam epitaxy and properties of ferromagnetic III-V semiconductors

Owing to the nonmagnetic nature of III-V compounds magnetic cooperative phenomena were not a part of the rich soil of III-V heterostructures in the past. The synthesis of magnetic III-V semiconductors and subsequent discovery of carrier-induced ferromagnetism in them now allows us to combine ferromagnetism with the properties of III-V heterostructures. Here, I describe molecular beam epitaxy of ferromagnetic III/V´s, a mean-field model for the carrier-induced ferromagnetism in them, and isothermal and reversible electric field control of carrier-induced ferromagnetism in a ferromagnetic semiconductor (In,Mn)As.