Growth and characterization of self-organized (In,Mn)As diluted magnetic quantum dots

Author

Ghosh, S. ; Vurgaftman, I. ; Bhattacharya, P.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

13

Lastpage

14

Abstract

Diluted magnetic semiconductors (DMS) have been studied extensively over the past decade for their possible applications in electronic and optoelectronic devices based on spin polarized carriers. With the successful growth of DMS materials like (In,Mn)As and (Ga,Mn)As, III-Mn-V have become very important because of their higher Curie temperatures and strong remnant magnetization compared to II-Mn-VI DMS. We have recently measured long spin-relaxation times in self-organized InAs/GaAs quantum dots. Therefore, it is of interest to study the ferromagnetic properties of self-organized (In,Mn)As diluted magnetic quantum dots.

Keywords

Curie temperature; III-V semiconductors; ferromagnetic materials; indium compounds; interface magnetism; manganese compounds; molecular beam epitaxial growth; remanence; semiconductor growth; semiconductor quantum dots; semimagnetic semiconductors; spin polarised transport; Curie temperatures; III-Mn-V; InMnAs; diluted magnetic semiconductors; ferromagnetic properties; growth; long spin-relaxation times; remnant magnetization; self-organized (In,Mn)As diluted magnetic quantum dots; solid source molecular beam epitaxy; spin polarized carriers; Gallium arsenide; Magnetic materials; Magnetic properties; Magnetic semiconductors; Magnetization; Optoelectronic devices; Polarization; Quantum dots; Semiconductor materials; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037736

Filename

1037736