Title :
Growth and characterization of self-organized (In,Mn)As diluted magnetic quantum dots
Author :
Ghosh, S. ; Vurgaftman, I. ; Bhattacharya, P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Diluted magnetic semiconductors (DMS) have been studied extensively over the past decade for their possible applications in electronic and optoelectronic devices based on spin polarized carriers. With the successful growth of DMS materials like (In,Mn)As and (Ga,Mn)As, III-Mn-V have become very important because of their higher Curie temperatures and strong remnant magnetization compared to II-Mn-VI DMS. We have recently measured long spin-relaxation times in self-organized InAs/GaAs quantum dots. Therefore, it is of interest to study the ferromagnetic properties of self-organized (In,Mn)As diluted magnetic quantum dots.
Keywords :
Curie temperature; III-V semiconductors; ferromagnetic materials; indium compounds; interface magnetism; manganese compounds; molecular beam epitaxial growth; remanence; semiconductor growth; semiconductor quantum dots; semimagnetic semiconductors; spin polarised transport; Curie temperatures; III-Mn-V; InMnAs; diluted magnetic semiconductors; ferromagnetic properties; growth; long spin-relaxation times; remnant magnetization; self-organized (In,Mn)As diluted magnetic quantum dots; solid source molecular beam epitaxy; spin polarized carriers; Gallium arsenide; Magnetic materials; Magnetic properties; Magnetic semiconductors; Magnetization; Optoelectronic devices; Polarization; Quantum dots; Semiconductor materials; Temperature;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037736
