Compliant epitaxial growth of In/sub x/Ga/sub 1-x/As on In/sub 0.25/Ga/sub 0.75/As pseudo-substrates

Author

Pickrell, G.W. ; Xu, C.F. ; Chang, K.L. ; Hsieh, K.C. ; Cheng, K.Y.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

19

Lastpage

20

Abstract

In this study, a pseudo-substrate is formed using lateral oxidation of an underlying Al/sub 0.98/Ga/sub 0.02/As layer to improve the material quality of a relaxed In/sub 0.25/Ga/sub 0.75/As seeding layer. Photoluminescence measurements, Hall-effect measurements, and cross-sectional transmission electron microscopy (TEM) were used to evaluate the quality of the regrown materials.

Keywords

Hall effect; III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; substrates; transmission electron microscopy; Hall-effect; In/sub 0.25/Ga/sub 0.75/As; In/sub 0.25/Ga/sub 0.75/As pseudo-substrates; In/sub x/Ga/sub 1-x/As; MBE; TEM; compliant epitaxial growth; cross-sectional transmission electron microscopy; lateral oxidation; photoluminescence; relaxed In/sub 0.25/Ga/sub 0.75/As seeding layer; underlying Al/sub 0.98/Ga/sub 0.02/As layer; Epitaxial growth; Lattices; Molecular beam epitaxial growth; Photoluminescence; Substrates; Superlattices; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037739

Filename

1037739