Title :
Compliant epitaxial growth of In/sub x/Ga/sub 1-x/As on In/sub 0.25/Ga/sub 0.75/As pseudo-substrates
Author :
Pickrell, G.W. ; Xu, C.F. ; Chang, K.L. ; Hsieh, K.C. ; Cheng, K.Y.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
In this study, a pseudo-substrate is formed using lateral oxidation of an underlying Al/sub 0.98/Ga/sub 0.02/As layer to improve the material quality of a relaxed In/sub 0.25/Ga/sub 0.75/As seeding layer. Photoluminescence measurements, Hall-effect measurements, and cross-sectional transmission electron microscopy (TEM) were used to evaluate the quality of the regrown materials.
Keywords :
Hall effect; III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; substrates; transmission electron microscopy; Hall-effect; In/sub 0.25/Ga/sub 0.75/As; In/sub 0.25/Ga/sub 0.75/As pseudo-substrates; In/sub x/Ga/sub 1-x/As; MBE; TEM; compliant epitaxial growth; cross-sectional transmission electron microscopy; lateral oxidation; photoluminescence; relaxed In/sub 0.25/Ga/sub 0.75/As seeding layer; underlying Al/sub 0.98/Ga/sub 0.02/As layer; Epitaxial growth; Lattices; Molecular beam epitaxial growth; Photoluminescence; Substrates; Superlattices; Temperature;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037739
