Title :
Fabrication and characterization of a GaAs field emission triode for low voltage operation at atmospheric pressure
Author :
Arslan, D. ; DasGupta, A. ; Flath, M. ; Hartnagel, H.L.
Author_Institution :
Inst. fur Hochfrequenztech., Tech. Univ. Darmstadt, Germany
Abstract :
We fabricated field emission triodes (FEMTs) consisting of wedge shaped cathodes and gates. The wedges have a high degree of geometrical reproducibility due to the chosen technology. The I-V characteristics of the devices was measured and demonstrated the principle function of FEMTs. The fabrication process of the presented devices is easy and reliable.
Keywords :
III-V semiconductors; electron field emission; gallium arsenide; low-power electronics; triodes; vacuum microelectronics; GaAs; GaAs field emission micro triode; I-V characteristics; atmospheric pressure; fabrication; low voltage operation; wedge shaped FEMT; Anodes; Cathodes; Electron sources; Etching; Fabrication; Gallium arsenide; Low voltage; Scanning electron microscopy; Solid modeling; Threshold voltage;
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
DOI :
10.1109/IVMC.1998.728760
