Title :
Optimization of programming consumption of silicon nanocrystal memories for low power applications
Author :
Marca, V. Della ; Masoero, L. ; Molas, G. ; Amouroux, J. ; Petit-Faivre, E. ; Postel-Pellerin, J. ; Lalande, F. ; Jalaguier, E. ; Deleonibus, S. ; De Salvo, B. ; Boivin, P. ; Ogier, J-L
Author_Institution :
STMicroelectron., Rousset, France
Abstract :
In this paper we propose the optimization of the programming operation scheme of Silicon nanocrystal (Si-nc) memories in order to reduce the energy consumption for low power applications. Using the program kinetic characteristics and a dynamic current measurement method, the programming window and the energy consumption during Channel Hot Electrons programming are deeply analyzed; evaluating ramp and box pulse with various gate and drain voltage biases. Finally the critical role of the tunnel oxide is evaluated to satisfy both retention and consumption requirements.
Keywords :
low-power electronics; optimisation; channel hot electrons programming; drain voltage bias; dynamic current measurement method; energy consumption; low power applications; program kinetic characteristics; programming consumption; programming operation scheme; programming window; silicon nanocrystal memory; tunnel oxide; Europe; Fabrication; Lead; Nanoscale devices; Semiconductor device reliability; Silicon compounds; Silicon nanocrystal memories; energy consumption; tunnel oxide thickness;
Conference_Titel :
Semiconductor Conference Dresden-Grenoble (ISCDG), 2012 International
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-1717-7
DOI :
10.1109/ISCDG.2012.6359988
