Title :
High current Si field emission devices with plasma passivation and HfC coating
Author :
Rakhshandehroo, M.R. ; Pang, S.W.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Dry etching with mask erosion was used to etch emitter tips in single-crystal Si. Effects of surface passivation on the emission characteristics of gated Si field emitters were studied by exposing the samples to a H/sub 2/ plasma for 2 min before testing. Emitter tips were also coated with Mo silicide and HfC to improve their emission characteristics.
Keywords :
electron field emission; elemental semiconductors; hafnium compounds; passivation; plasma materials processing; silicon; vacuum microelectronics; HfC; HfC coating; Mo silicide coating; Si; Si field emission device; dry etching; emitter tip; mask erosion; plasma passivation; Coatings; Dry etching; Hybrid fiber coaxial cables; Passivation; Plasma applications; Plasma devices; Plasma properties; Plasma sources; Silicides; Voltage;
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
DOI :
10.1109/IVMC.1998.728762
