Title :
Advanced TSV-Based Crystal Resonator Devices Using 3-D Integration Scheme With Hermetic Sealing
Author :
Jian-Yu Shih ; Yen-Chi Chen ; Chih-Hung Chiu ; Yu-Chen Hu ; Chung-Lun Lo ; Chi-Chung Chang ; Kuan-Neng Chen
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
An advanced crystal resonator device scheme using Cu through-silicon via (TSV), 3-D integration, and Si packaging technologies is successfully demonstrated. In addition to robust structural quality, the crystal resonator packaging has excellent electrical characteristics of low leakage current and reliability against harsh environment for MIL-STD-883 hermetic encapsulation. Using 3-D integration technologies and Si packaging, the proposed TSV-based crystal resonator device possesses the manufacturability potential while conventional ones using a metal lid or ceramic enclosure.
Keywords :
crystal resonators; encapsulation; hermetic seals; leakage currents; semiconductor device packaging; three-dimensional integrated circuits; Cu; Si; 3-D integration; crystal resonator through-silicon via (TSV);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2265335
