Title :
Transport measurement across single and coupled dopants implanted in a CMOS channel
Author :
Dupont-Ferrier, E. ; Roche, B. ; Voisin, B. ; Pierre, M. ; Jehl, X. ; Sanquer, M. ; De Franceschi, S. ; Wacquez, R. ; Vinet, M.
Author_Institution :
SPSMS, CEA/INAC, Grenoble, France
Abstract :
We access properties of single dopants embedded in ultra-scaled MOSFET. In such nanostructures, the ionization energy of a single dopant is enhanced. We establish a new method to determine the energy spectrum of a single dopant by connecting two dopants in series and using one dopant as an energy probe for the second one. Gigahertz microwave driving of this double donor system reveals coherent charge transfert in this ultimate “atomic” transistor.
Keywords :
CMOS integrated circuits; MOSFET; semiconductor doping; CMOS channel; coupled dopants; double donor system; energy probe; energy spectrum; gigahertz microwave driving; ionization energy; single dopants; transport measurement; ultimate atomic transistor; ultra scaled MOSFET; Nanoscale devices; Shape measurement; Temperature measurement; Transistors; MOSFET; ionisation energy; single dopant; spectroscopy;
Conference_Titel :
Semiconductor Conference Dresden-Grenoble (ISCDG), 2012 International
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-1717-7
DOI :
10.1109/ISCDG.2012.6359992
