DocumentCode
2320630
Title
The studies of thin film coatings on the surface of porous silicon
Author
Galiy, P.V. ; Monastyrskii, L.S. ; Nenchuk, T.M. ; Boyko, J.V. ; Rudyi, I.O.
Author_Institution
Phys. Dept., Lviv State Univ., Ukraine
fYear
1998
fDate
19-24 July 1998
Firstpage
299
Abstract
Summary form only given. The complex of surface and subsurface sensitive methods: Auger electron spectroscopy (AES), thermostimulated exoelectron emission (TSEE), mass-spectrometry (MS), ellipsometry and low-frequency dielectric spectroscopy (LFDS) have been applied to investigation of the thin films´ coatings, which play a significant role in photo- (PL) and electroluminescence (EL) of por-Si/Si heterostructures.
Keywords
Auger effect; elemental semiconductors; ellipsometry; exoelectron emission; mass spectra; permittivity; porous semiconductors; silicon; Auger electron spectroscopy; Si; electroluminescence; ellipsometry; low-frequency dielectric spectroscopy; mass spectrometry; photoluminescence; por-Si/Si heterostructure; porous silicon surface; thermostimulated exoelectron emission; thin film coating; Chemical analysis; Coatings; Dielectric thin films; Electrochemical impedance spectroscopy; Electron emission; Ellipsometry; Mass spectroscopy; Physics; Semiconductor thin films; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location
Asheville, NC, USA
Print_ISBN
0-7803-5096-0
Type
conf
DOI
10.1109/IVMC.1998.728766
Filename
728766
Link To Document