Continuous wave operation of quantum cascade lasers

Author

Beck, M. ; Hofstetter, D. ; Aellen, T. ; Faist, J.

Author_Institution

Inst. de Phys., Neuchatel Univ., Switzerland

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

31

Lastpage

32

Abstract

We present buried heterostructure quantum cascade lasers with a four quantum well (QW) active region based on a double phonon resonance and with an improved waveguiding scheme and better heat dissipation for high temperature CW operation. The laser structure is grown by molecular beam epitaxy (MBE) using ternary InGaAs and InAlAs alloys lattice matched to an n-doped InP substrate.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; phonons; quantum cascade lasers; waveguide lasers; InAlAs; InGaAs; InP; buried heterostructure QC lasers; continuous wave operation; double phonon resonance; heat dissipation; high temperature CW operation; lattice matched; molecular beam epitaxy; n-doped InP substrate; quantum cascade lasers; quantum well active region; waveguiding scheme; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Phonons; Quantum cascade lasers; Quantum well lasers; Resonance; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037745

Filename

1037745