Title :
MBE growth of terahertz quantum cascade semiconductor lasers
Author :
Beere, H.E. ; Linfield, E.H. ; Davies, A.G. ; Ritchie, D.A. ; Kohler, R. ; Tredicucci, A. ; Beltram, F. ; Rochat, M. ; Ajili, L. ; Willenberg, H. ; Faist, J.
Author_Institution :
Cavendish Lab., Cambridge Univ., UK
Abstract :
We report here the growth, fabrication, and operation of two different quantum cascade laser structures that emit in a single cavity mode in the terahertz regime; Both laser designs employ a chirped superlattice active region in a QC structure, comprising seven GaAs quantum wells separated by Al/sub 0.15/Ga/sub 0.85/As barriers, with a novel type of waveguide that provides confinement of the very long wavelength radiation to a very thin, highly doped buried layer.
Keywords :
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; optical fabrication; quantum cascade lasers; semiconductor superlattices; waveguide lasers; Al/sub 0.15/Ga/sub 0.85/As; Al/sub 0.15/Ga/sub 0.85/As barriers; GaAs; GaAs quantum well lasers; GaAs quantum wells; MBE growth; QC structure; chirped superlattice active region; highly doped buried layer; quantum cascade laser structures; single cavity mode; terahertz quantum cascade semiconductor lasers; terahertz regime; waveguide lasers; Chirp; Gallium arsenide; Laser modes; Optical design; Optical device fabrication; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Semiconductor superlattices; Waveguide lasers;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037748
