DocumentCode
2320706
Title
Bias-dependent linear, scalable millimeter-wave FET model
Author
Wood, J. ; Root, D.E.
Author_Institution
Microwave Technol. Centre, Agilent Technol. Inc., Santa Rosa, CA, USA
Volume
3
fYear
2000
fDate
11-16 June 2000
Firstpage
1381
Abstract
This paper describes a measurement-based, bias-dependent, linear equivalent circuit FET/HEMT model that is accurate to at least 100 GHz and scalable up to 12 parallel gate fingers and from 100-1000 /spl mu/m total gate width. The equivalent circuit element values are determined at each bias point in V/sub gs/-V/sub ds/ space.
Keywords
Equivalent circuits; High electron mobility transistors; Millimetre wave field effect transistors; Semiconductor device measurement; Semiconductor device models; 100 GHz; 100 to 1000 micron; EHF; HEMT model; bias-dependent linear model; linear equivalent circuit; measurement-based model; millimeter-wave FET; scalable MM-wave FET model; Calibration; Circuit topology; Equivalent circuits; FETs; Fingers; Measurement standards; Metallization; Microwave technology; Probes; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Print_ISBN
0-7803-5687-X
Type
conf
DOI
10.1109/MWSYM.2000.861798
Filename
861798
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