DocumentCode
2320791
Title
Effects of phase and thickness of cobalt silicide on field emission properties of silicon emitters
Author
Yoon, Young Joon ; Kim, Gi Bum ; Chi, Eung Joon ; Shim, Jae Yeob ; Baik, Hong Koo
Author_Institution
Dept. of Metall. Eng., Yonsei Univ., Seoul, South Korea
fYear
1998
fDate
19-24 July 1998
Firstpage
314
Lastpage
315
Abstract
Cobalt silicide emitters showed the enhanced emission properties in I-V characteristics and long-term current stability, compared to bare silicon emitters. They are mainly caused by the increase of emission area and the formation of chemically stable surface of silicide emitters. Detailed results about the effects of phase and thickness of cobalt silicide on electron emission are discussed.
Keywords
cobalt compounds; electron field emission; elemental semiconductors; silicon; I-V characteristics; Si-CoSi; cobalt silicide; current stability; electron emission; field emission; silicon emitter; surface coating; Annealing; Chemicals; Cobalt; Conductivity; Current measurement; Electron emission; Silicides; Silicon; Stability; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location
Asheville, NC, USA
Print_ISBN
0-7803-5096-0
Type
conf
DOI
10.1109/IVMC.1998.728774
Filename
728774
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