Title :
A 1.5 /spl mu/m GaInNAs(Sb) laser grown on GaAs by MBE
Author :
Ha, Wonill ; Gambin, Vincent ; Bank, Seth ; Wistey, Mark ; Yuen, Homan ; Goddard, Lynford ; Kim, Seongsin ; Harris, James
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA, USA
Abstract :
Summary form only given. Ever increasing bandwidth demands have lead to the commercialization of lasers emitting in the range 1.3-1.55 /spl mu/m. It was not until the recent discovery of the large bowing parameter of the GaInNAs quaternary that a suitable active layer was found. Recent work has focused on increasing the indium concentration through the use of antimony, both as a constituent and a surfactant. The results of a photoluminescence (PL) study are summarized. We have found that it is possible to maintain high PL intensity for samples out to 1.6 /spl mu/m.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser transitions; molecular beam epitaxial growth; photoluminescence; semiconductor lasers; 1.3 to 1.55 micron; GaAs; GaInNAs quaternary; GaInNAs(Sb); GaInNAs(Sb) laser; MBE growth; active layer; bowing parameter; high PL intensity; photoluminescence; Gallium arsenide; Nitrogen; Optical pumping; Optical waveguides; Power generation; Pump lasers; Quantum well lasers; Semiconductor lasers; Temperature; Threshold current;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037759
