Title :
1.36 /spl mu/m InGaNAs/GaNAs laser diodes grown by molecular beam epitaxy using an Ar/N/sub 2/ RF plasma
Author :
Gupta, J.A. ; Barrios, P.J. ; Wasilewski, Z.R. ; Aers, G.C. ; Williams, R.L.
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
Abstract :
Among the advantages of dilute nitride III-V heterostructures is the opportunity for advanced strain and bandgap engineering in the active regions of laser diode structures. In the present work we use tensile-strained GaNAs barrier layers to reduce the confinement energies in compressively-strained InGaNAs single quantum wells on GaAs. We also demonstrate the effectiveness of Ar gas dilution for producing high-quality dilute nitride layers with an RF plasma cell.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser transitions; molecular beam epitaxial growth; quantum well lasers; 1.36 micron; Ar gas dilution; Ar-N/sub 2/; Ar/N/sub 2/ RF plasma; GaAs; InGaNAs-GaNAs; InGaNAs/GaNAs laser diodes; RF plasma cell; active regions; bandgap engineering; compressively-strained InGaNAs single quantum wells; confinement energies; dilute nitride heterostructures; high-quality dilute nitride layers; laser diode structures; molecular beam epitaxy; strain engineering; tensile-strained GaNAs barrier layers; Argon; Capacitive sensors; Cells (biology); Diode lasers; Gallium arsenide; III-V semiconductor materials; Molecular beam epitaxial growth; Photonic band gap; Plasma confinement; Radio frequency;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037761
