Non-quasi-static nonlinear model for FinFETs using higher-order sources

A direct analytical extraction of a non-quasi-static nonlinear table-based FET model at mm-wave frequencies is demonstrated in this study. It makes use of extended charge and current sources at both gate and drain terminals to account for the frequency dispersion behavior of transistors at mm-wave frequencies. The model is validated using silicon FinFET transistors. Excellent agreement is achieved between measurements and model simulation revealing significant improvements over quasi-static nonlinear model results.