Title :
Properties of metamorphic materials and device structures on GaAs substrates
Author :
Hoke, W.E. ; Kennedy, T.D. ; Torabi, A. ; Whelan, C.S. ; Marsh, P.F. ; Leoni, R.E. ; Jang, J.H. ; Adesida, I. ; Chang, K.L. ; Hsieh, K.C.
Author_Institution :
Raytheon RF Components, Andover, MA, USA
Abstract :
In this work, the structural, optical, and electrical properties of metamorphic films are examined and compared to non-metamorphic films. Results for electrical and optical devices are presented. Finally the reliability of metamorphic HEMTs is examined.
Keywords :
III-V semiconductors; crystal structure; electrical conductivity; gallium arsenide; high electron mobility transistors; semiconductor thin films; substrates; GaAs; GaAs substrates; device structures; electrical devices; electrical properties; metamorphic HEMTs; metamorphic materials; optical devices; optical properties; structural properties; Buffer layers; Costs; Gallium arsenide; Indium phosphide; Laboratories; Lattices; Optical films; Rough surfaces; Substrates; mHEMTs;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037763
