Title :
Effect of different PDAs and a PMA on the electrical performance of TiN/ZAZ/TiN MIM capacitors
Author :
Weinreich, W. ; Seidel, K. ; Sundqvist, J. ; Czernohorsky, M. ; Kücher, P.
Author_Institution :
Fraunhofer Center Nanoelectronic Technol., Dresden, Germany
Abstract :
ZrO2-based MIM capacitors are used in various memory as well as for RF applications. Thus, material tuning is necessary to selectively optimize the electrical performance. In this paper, the C-V, J-V and reliability properties of Al-doped ZrO2 MIM capacitors with TiN electrodes are compared for different anneals showing minor differences between PDA and PMA in N2. However, there is a significant influence of a PDA in NH3 that forms a two-phase system in the high-k layer.
Keywords :
III-V semiconductors; MIM devices; annealing; capacitors; circuit tuning; electrodes; high-k dielectric thin films; integrated circuit metallisation; integrated circuit reliability; titanium compounds; zirconium compounds; C-V; J-V; MIM capacitor; PDA; PMA; RF application; TiN-ZrO2:Al-TiN; electrical performance; electrode; high-k layer; material tuning; post deposition annealing; post metallization anneal; reliability property; two-phase system; Annealing; CMOS integrated circuits; Capacitors; Films; Nonuniform electric fields; System-on-a-chip; Tin; CET; MIM capacitor; N2; NH3; PDA; PMA; ZrO2; breakdown voltage; leakage current;
Conference_Titel :
Semiconductor Conference Dresden-Grenoble (ISCDG), 2012 International
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-1717-7
DOI :
10.1109/ISCDG.2012.6360010
