Title :
A 210 W LDMOS RF power transistor for 2.2 GHz cellular applications with enabling features for LTE base stations
Author :
Meyer, S. De ; Beaulaton, H.
Author_Institution :
RF Div., Freescale Semiconducteurs SAS, Toulouse
Abstract :
This paper presents the first 210 W silicon LDMOS single-ended RF power transistor designed in a NI-780 package for 2.2 GHz cellular applications. This device is showing a flat power gain over three times the band : under a WCDMA 3GPP signal, it exhibits a gain variation of 1.1 dB over 180 MHz bandwidth. A special focus was put on the video bandwidth performance during the design phase, leading to a figure of 60 MHz, suitable for LTE base stations. Some LTE data are shown in this paper. A product model has been derived and validation is also presented here.
Keywords :
3G mobile communication; MOS integrated circuits; broadband networks; cellular radio; code division multiple access; power transistors; LDMOS RF power transistor; LTE base stations; WCDMA 3GPP signal; cellular applications; flat power gain; frequency 2.2 GHz; frequency 60 MHz; gain 1.1 dB; power 210 W; video bandwidth performance; Bandwidth; Base stations; Equations; Multiaccess communication; Power transistors; RF signals; Radio frequency; Resonance; Semiconductor device packaging; Signal design; LTE signal; high gain; high video bandwidth; power transistor; product model;
Conference_Titel :
Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008. Workshop on
Conference_Location :
Malaga
Print_ISBN :
978-1-4244-2645-4
Electronic_ISBN :
978-1-4244-2646-1
DOI :
10.1109/INMMIC.2008.4745707
