Title :
Modeling study of the SiGe/Si heterostructure in FDSOI pMOSFETs
Author :
Soussou, A. ; Rideau, D. ; Leroux, C. ; Ghibaudo, G. ; Tavernier, C. ; Jaouen, H.
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
We investigate an efficient way to handle the SiGe/Si heterostructure in pMOS FDSOI devices. The electrostatic is studied using a self consistent 6-band k.p Schrodinger-Poisson solver. We show that the heterostructure can be efficiently treated using an analytical in-plane integration of the charge density based on the effective mass approximation dispersion relation. The shift of the threshold voltage for various SiGe FDSOI pMOS structures with varying Ge content and strained SiGe layer thickness is shown.
Keywords :
Ge-Si alloys; MOSFET; approximation theory; high electron mobility transistors; FDSOI pMOSFET; Schrodinger-Poisson solver; SiGe-Si; analytical in-plane integration; charge density; mass approximation dispersion relation; Analytical models; Atmospheric modeling; Decision support systems; Germanium; MOSFET circuits; Silicon; Tin; 6-level k.p model; SiGe FDSOI pMOSFETs; SiGe/Si heterostruture; charge density; threshold voltage; valence band disontinuity;
Conference_Titel :
Semiconductor Conference Dresden-Grenoble (ISCDG), 2012 International
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-1717-7
DOI :
10.1109/ISCDG.2012.6360012
