DocumentCode :
2321039
Title :
Fabrication of GaAs laser diodes on Si using low temperature bonding of MBE grown GaAs wafers with Si wafers
Author :
Cengher, D. ; Hatzopoulos, Z. ; Gallis, S. ; Deligeorgis, G. ; Aperathitis, E. ; Alexe, M. ; Dragoi, V. ; Kyriakis-Bitzaros, E.D. ; Halkias, G. ; Georgakilas, A.
Author_Institution :
Dept. of Phys., Crete Univ., Greece
fYear :
2002
fDate :
15-20 Sept. 2002
Firstpage :
81
Lastpage :
82
Abstract :
The conventional heteroepitaxial GaAs-on-Si growth suffers from poor III-V material quality (dislocation density of /spl sim/10/sup 8/ cm/sup -2/ and a residual thermal stress of /spl sim/10/sup 9/ dyn/cm/sup 2/) and some process incompatibilities between the CMOS and III-V technologies. For these reasons, we have developed a heterogeneous integration scheme, which has the wafer-scale characteristics of monolithic integration and at the same time is compatible with commercial fully processed CMOS or bipolar-CMOS (BiCMOS) technology. We report on the basic process flow the properties of the GaAs/Si material and the processed laser diodes. MBE was used to grow GaAs/AlGaAs heterostructures with an inversed epitaxial structure, on 3inch GaAs substrates, after the inclusion of an AlAs etch stop layer. The GaAs wafer was then bonded at room temperature face-to-face with a 4inch Si wafer covered by spin-on-glass. Backside thinning of the GaAs substrate was used to leave the active thin III-V heterostructure on Si. The optoelectronic quality and the residual stress in the bonded III-V layers were assessed by photoluminescence and photoreflectance spectroscopies.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; internal stresses; molecular beam epitaxial growth; photoluminescence; photoreflectance; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; silicon; thermal stresses; wafer bonding; CMOS; GaAs laser diodes; GaAs-Si; MBE; Si; bipolar-CMOS; inversed epitaxial structure; low temperature wafer bonding; monolithic integration; optoelectronic quality; photoluminescence; photoreflectance; residual stress; spin-on-glass; wafer-scale characteristics; CMOS technology; Diode lasers; Gallium arsenide; III-V semiconductor materials; Molecular beam epitaxial growth; Optical device fabrication; Optical materials; Temperature; Thermal stresses; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
Type :
conf
DOI :
10.1109/MBE.2002.1037769
Filename :
1037769
Link To Document :
بازگشت