DocumentCode :
2321047
Title :
Plasma etching of ALX 2010 polymer for WLP applications
Author :
Glück, B. ; Truong, L. ; Bonnier, J. Char ; Berthelot, A. ; Basset, G. ; Bilde, J. ; Barnola, S.
Author_Institution :
STMicroelectron., Crolles, France
fYear :
2012
fDate :
24-26 Sept. 2012
Firstpage :
207
Lastpage :
209
Abstract :
Polymers are used for packaging, passive device fabrication or generally as buffer layer. Now a new polymer, the ALX is available. In this study the development of a plasma etching process of ALX 2010 is described. Compared to the lithographic feature definition, critical dimensions (CD) below ALX resolution and controlling the profile of the etched ALX is possible. The application of the RIE process on first WLP structures is shown.
Keywords :
buffer layers; integrated circuit manufacture; lithography; sputter etching; wafer level packaging; ALX 2010 polymer; CD below ALX resolution; RIE process; WLP applications; WLP structures; buffer layer; critical dimensions; etched ALX; lithographic feature definition; packaging; passive device fabrication; plasma etching process; Etching; Plasmas; Sulfur hexafluoride; ALX; Reactive Ion Etching; Wafer Level Packaging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference Dresden-Grenoble (ISCDG), 2012 International
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-1717-7
Type :
conf
DOI :
10.1109/ISCDG.2012.6360015
Filename :
6360015
Link To Document :
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