DocumentCode
2321047
Title
Plasma etching of ALX 2010 polymer for WLP applications
Author
Glück, B. ; Truong, L. ; Bonnier, J. Char ; Berthelot, A. ; Basset, G. ; Bilde, J. ; Barnola, S.
Author_Institution
STMicroelectron., Crolles, France
fYear
2012
fDate
24-26 Sept. 2012
Firstpage
207
Lastpage
209
Abstract
Polymers are used for packaging, passive device fabrication or generally as buffer layer. Now a new polymer, the ALX is available. In this study the development of a plasma etching process of ALX 2010 is described. Compared to the lithographic feature definition, critical dimensions (CD) below ALX resolution and controlling the profile of the etched ALX is possible. The application of the RIE process on first WLP structures is shown.
Keywords
buffer layers; integrated circuit manufacture; lithography; sputter etching; wafer level packaging; ALX 2010 polymer; CD below ALX resolution; RIE process; WLP applications; WLP structures; buffer layer; critical dimensions; etched ALX; lithographic feature definition; packaging; passive device fabrication; plasma etching process; Etching; Plasmas; Sulfur hexafluoride; ALX; Reactive Ion Etching; Wafer Level Packaging;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference Dresden-Grenoble (ISCDG), 2012 International
Conference_Location
Grenoble
Print_ISBN
978-1-4673-1717-7
Type
conf
DOI
10.1109/ISCDG.2012.6360015
Filename
6360015
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