Title :
Lattice-matched Al/sub 0.95/Ga/sub 0.05/AsSb oxide for current confinement in InP-based long wavelength VCSELs
Author :
Reddy, MHM ; Buell, D.A. ; Asano, T. ; Koda, R. ; Freezell, D. ; Huntington, A.S. ; Coldren, L.A.
Author_Institution :
California Univ., Santa Barbara, CA, USA
Abstract :
InP-based active region is the material-of-choice for long wavelength VCSELs. In order to develop low threshold VCSELs, it is essential to have lateral current- and optical-confining apertures. The use of AlAs oxide-defined apertures has resulted in reduced optical loss of short wavelength VCSELs grown lattice-matched to GaAs. On the other hand, the InP lattice-matched analogue, namely AlInAs (TA,), is not an ideal candidate for oxide apertures because of its slow oxidation rate and high oxidation temperature. Though the efforts to increase the oxidation rate by using strained (T/sub As//AlAs) and strain-compensated (AlAs/InAs) superlattices have shown improvement in the oxidation rate and current confinement, it would be desirable to have a lattice-matched confinement layer which can be oxidized at much lower temperatures to increase the process reliability and yield. In this paper, we have studied the InP lattice-matched Al/sub 0.95/Ga/sub 0.05/AsSb (Q/sub Sb/) oxide layer for current confinement.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; quantum well lasers; surface emitting lasers; Al/sub 0.95/Ga/sub 0.05/AsSb-InP; InP-based long wavelength VCSELs; current confinement; high oxidation temperature; lattice-matched Al/sub 0.95/Ga/sub 0.05/AsSb oxide; optical loss; slow oxidation rate; Apertures; Circuits; High speed optical techniques; Optical losses; Oxidation; Photonics; Threshold current; USA Councils;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037771