Title :
Molecular beam epitaxial growth and characterization of InP/GaAsSb/InP double heterojunction bipolar transistors
Author :
Rajavel, R.D. ; Hussain, T. ; Montes, M.C. ; Chow, D.H.
Author_Institution :
LLC, HRL Labs., Malibu, CA, USA
Abstract :
The type II band lineup of InP and GaAsSb facilitates the unhindered transport of electrons from the base to the collector of a InP/GaAsSb/InP double heterojunction bipolar transistor (DHBT). This favorable band alignment of the base and the collector regions is highly desirable for the high-speed operation of DHBTs. Bolognesi et al. have recently demonstrated f/sub t/ and f/sub max/ values as high as 300 GHz in InP/GaAsSb/InP DHBTs that were grown by metalorganic chemical vapor deposition (MOCVD). At HRL we have employed molecular beam epitaxy (MBE) to study the growth and doping of GaAs/sub 1-x/Sb/sub x/ alloys, and for the growth of InP/GaAsSb/InP n-p-n DHBTs.
Keywords :
III-V semiconductors; band structure; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor doping; semiconductor growth; 300 GHz; DHBT; GaAs/sub 1-x/Sb/sub x/ alloys; InP-GaAsSb-InP; InP/GaAsSb/InP double heterojunction bipolar transistors; InP/GaAsSb/InP n-p-n DHBTs; MBE; band alignment; collector; doping; high-speed operation; molecular beam epitaxial growth; type II band line-up; Doping; Double heterojunction bipolar transistors; Electrons; Indium phosphide; Laboratories; Lattices; Molecular beam epitaxial growth; Substrates; Telephony; Tin alloys;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037777
