Title :
Device and materials characteristics of MBE-grown InAs bipolar transistors
Author :
Averett, K.L. ; Wu, X. ; Maimon, S. ; Koch, M.W. ; El-Naggar, A. ; Wicks, G.W.
Author_Institution :
Dept. of Phys. & Astron., Rochester Univ., NY, USA
Abstract :
The large electron mobility and high saturation velocity of InAs make it a promising material for the operation of high speed electronic devices. As semiconductor scaling continues to reduce device size, the smaller bandgap III-Vs, such as InAs, play a more prominent role in the design of new low power devices. The present work involves materials and device investigations related to InAs-based bipolar transistors grown by molecular beam epitaxy (MBE).
Keywords :
III-V semiconductors; bipolar transistors; electron mobility; indium compounds; low-power electronics; molecular beam epitaxial growth; semiconductor growth; InAs; MBE; MBE-grown InAs bipolar transistors; bipolar transistors; device size; electron mobility; high saturation velocity; high speed electronic devices; low power devices; materials characteristics; molecular beam epitaxy; semiconductor scaling; Bipolar transistors; Charge carrier processes; Electron optics; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Optical materials; Physics; Semiconductor device manufacture; Semiconductor materials; Temperature;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037779
