Control of MBE surface step-edge kinetics to make an atomically smooth quantum well

Author

Yoshita, Masahiro ; Oh, Ji-Won ; Akiyama, Hidefumi ; Pfeiffer, Loren ; West, Ken W.

Author_Institution

Inst. for Solid State Phys., Univ. of Tokyo, Chiba, Japan

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

103

Lastpage

104

Abstract

Summary form only given. On an atomic scale, all quantum wells grown by conventional MBE have rough barrier-well interfaces with step-edges, pits, or islands one or more monolayers (MLs) high. Cleaved-edge overgrowth is MBE on the atomically flat [110] surface exposed by an in situ cleave so that there exists no roughness on this bottom interface. The top surface of the overgrown [110] film, however, generally has large roughness due to the required GaAs [110] growth conditions. Here we control the molecular step-edge kinetics on the upper interface by growing on the smooth [110] cleave an integral number of GaAs MLs and then initiating a growth-interrupt-anneal. We characterize the structures using AFM and photoluminescence.

Keywords

III-V semiconductors; aluminium compounds; annealing; gallium arsenide; interface roughness; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum wells; GaAs-AlGaAs; MBE surface step-edge kinetics; annealing; atomically smooth quantum well; cleaved-edge overgrowth; molecular step-edge kinetics; photoluminescence; Annealing; Atomic layer deposition; Bonding; Gallium arsenide; Kinetic theory; Molecular beam epitaxial growth; Multilevel systems; Physics; Rough surfaces; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037780

Filename

1037780