Title :
Resistive switching behavior in TiN/HfO2/Ti/TiN devices
Author :
Walczyk, D. ; Bertaud, T. ; Sowinska, M. ; Lukosius, M. ; Schubert, M.A. ; Fox, A. ; Wolansky, D. ; Scheit, A. ; Fraschke, M. ; Schoof, G. ; Wolf, Ch ; Kraemer, R. ; Tillack, B. ; Korolevych, R. ; Stikanov, V. ; Wenger, Ch ; Schroeder, T. ; Walczyk, Ch
Author_Institution :
IHP, Frankfurt (Oder), Germany
Abstract :
This work reports the bipolar resistive switching behavior of more than 100 back-end-of-line (BEOL) integrated 600×600nm2 TiN/HfO2/Ti/TiN MIM devices in a 4 kbit memory array. Reliable current-voltage switching characteristics were only observed for devices with a thickness ratio of 1 (10 nm HfO2/10nm Ti), indicating the importance of the interface chemistry of the Ti/HfO2 interface. Moreover, the devices show good inter-cell uniformity and thus demonstrate promising prospects for embedded non-volatile memory (eNVM) applications.
Keywords :
MIM devices; hafnium compounds; random-access storage; titanium compounds; TiN-HfO2-Ti-TiN; back-end-of-line integrated MIM devices; bipolar resistive switching behavior; current-voltage switching characteristics; eNVM applications; embedded nonvolatile memory applications; intercell uniformity; interface chemistry; memory array; size 10 nm; Facsimile; Hafnium oxide; Switches; 4 kbit memory array; HfO2; MIM; RRAM;
Conference_Titel :
Semiconductor Conference Dresden-Grenoble (ISCDG), 2012 International
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-1717-7
DOI :
10.1109/ISCDG.2012.6360035
