DocumentCode
2321384
Title
Effects of defects and impurities on electronic properties in CoSb 3
Author
Akai, Koji ; Kurisu, Hiroki ; Shimura, Toshiya ; Matsuura, Mitsuru
Author_Institution
Fac. of Eng., Yamaguchi Univ., Japan
fYear
1997
fDate
26-29 Aug 1997
Firstpage
334
Lastpage
337
Abstract
The band structure and the density of states of doped and non-doped CoSb3 were computed by using the supercell. The computation has been done by the linear muffin-tin orbital method with non-overlapped-muffin-tin spheres. Based on the computational results, some doping effects were discussed
Keywords
band structure; cobalt compounds; defect states; electronic density of states; impurity states; muffin-tin potential; CoSb3; band structure; defects; density of states; electronic properties; impurities; linear muffin-tin orbital method; non-overlapped-muffin-tin spheres; supercell; Extraterrestrial measurements; Lattices; Microscopy; Orbital calculations; Periodic structures; Semiconductor device doping; Semiconductor impurities; Thermoelectricity; Tin alloys;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
Conference_Location
Dresden
ISSN
1094-2734
Print_ISBN
0-7803-4057-4
Type
conf
DOI
10.1109/ICT.1997.667147
Filename
667147
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