Title :
Spin injection from a ferromagnetic electrode into InAs surface inversion layer
Author :
Yoh, Kanji ; Ohno, Hiroshi ; Katano, Yoshito ; Mukasa, Koichi
Author_Institution :
Res. Center for Integrated Quantum Electron., Hokkaido Univ., Sapporo, Japan
Abstract :
Summary form only given. We show that the spin injection from a ferromagnetic electrode into a surface inversion layer of InAs is possible without an external magnetic field, which is a promising step towards the realization of a spin transistor. Electron spin is attracting much interest in semiconductors in the hope that the manipulation of the spin-entangled state would eventually lead to a quantum computer with a semiconductor chip. There have been discussions on whether or not an-efficient spin injection into a semiconductor is possible at all. Experimentally, spin injection from diluted magnetic semiconductors has been reported, with the injection efficiency of /spl ap/1%. The spin injection from high Tc ferromagnetic metals into semiconductors has been reported recently, demonstrating approximately 2%-efficient spin-injection in a Fe/GaAs system where electrons tunnel through a Schottky barrier which would limit the drain current drastically. Here we show that the spin injection is possible without a tunneling barrier in an Fe/InAs hybrid structure with an injection efficiency of /spl sim/4%.
Keywords :
III-V semiconductors; ferromagnetic materials; indium compounds; interface magnetism; iron; magnetisation; semiconductor-metal boundaries; spin polarised transport; 4 percent; Fe-InAs; Fe/InAs hybrid structure; InAs surface inversion layer; electroluminescence; ferromagnetic electrode; injection efficiency; light polarization; magnetization; quantum computer; spin injection; spin transistor; spin-entangled state; Electrodes; Electrons; Gallium arsenide; Iron; Lead compounds; Magnetic fields; Magnetic semiconductors; Quantum computing; Schottky barriers; Spin polarized transport;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037789