Impact of Ron(VDD) dependence on polar transmitter residual distortion

Author

Marante, Reinel ; García, José A. ; Cabral, Pedro M. ; Pedro, José C.

Author_Institution

Dept. Ing. de Comun., Univ. de Cantabria, Santander

fYear

2008

fDate

24-25 Nov. 2008

Firstpage

123

Lastpage

126

Abstract

In this paper, the particular impact of switching device ON resistance variation with drain supply voltage, R_on(V_DD), on polar transmitter distortion is considered. Pulsed I/V measurement results over a GaN HEMT are used to predict the deviation in the V_dd-to-AM modulation profile. System-level calculations, in the presence of other nonidealities, allow the evaluation of the relative contribution of this frequency dispersion related effect.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; nonlinear distortion; semiconductor device measurement; wide band gap semiconductors; GaN; HEMT; drain supply voltage; polar transmitter residual distortion; pulsed I/V measurement; switching device ON resistance; Dispersion; Distortion measurement; Electrical resistance measurement; Frequency; Gallium nitride; HEMTs; Pulse measurements; Pulse modulation; Transmitters; Voltage; GaN HEM; nonlinear distortion; polar transmitter; pulsed measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008. Workshop on

Conference_Location

Malaga

Print_ISBN

978-1-4244-2645-4

Electronic_ISBN

978-1-4244-2646-1

Type

conf

DOI

10.1109/INMMIC.2008.4745732

Filename

4745732