Title :
Impact of Ron(VDD) dependence on polar transmitter residual distortion
Author :
Marante, Reinel ; García, José A. ; Cabral, Pedro M. ; Pedro, José C.
Author_Institution :
Dept. Ing. de Comun., Univ. de Cantabria, Santander
Abstract :
In this paper, the particular impact of switching device ON resistance variation with drain supply voltage, Ron(VDD), on polar transmitter distortion is considered. Pulsed I/V measurement results over a GaN HEMT are used to predict the deviation in the Vdd-to-AM modulation profile. System-level calculations, in the presence of other nonidealities, allow the evaluation of the relative contribution of this frequency dispersion related effect.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; nonlinear distortion; semiconductor device measurement; wide band gap semiconductors; GaN; HEMT; drain supply voltage; polar transmitter residual distortion; pulsed I/V measurement; switching device ON resistance; Dispersion; Distortion measurement; Electrical resistance measurement; Frequency; Gallium nitride; HEMTs; Pulse measurements; Pulse modulation; Transmitters; Voltage; GaN HEM; nonlinear distortion; polar transmitter; pulsed measurement;
Conference_Titel :
Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008. Workshop on
Conference_Location :
Malaga
Print_ISBN :
978-1-4244-2645-4
Electronic_ISBN :
978-1-4244-2646-1
DOI :
10.1109/INMMIC.2008.4745732
