Confined optical phonons in AlAs/AlP strained short-period superlattices

Author

Nagano, M. ; Sugie, Ryuichi

Author_Institution

Komae Res. Lab., Central Res. Inst. of Electr. Power Ind., Tokyo, Japan

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

129

Lastpage

130

Abstract

Summary form only given. Strained layer superlattices made from lattice-mismatched constituents have attracted great interest due to their unique electronic and optical properties. AlAs/AlP superlattices have a relatively large lattice mismatch between AlAs and AlP (3.7%). Raman scattering can be used to investigate the phonon spectra of short-period strained layer superlattices (SLs) because the phonon is sensitive to structure details. In this letter, we report Raman scattering results of AlAs/AlP SLs and compare the experimental spectra with the results of simulations.

Keywords

III-V semiconductors; Raman spectra; aluminium compounds; internal stresses; phonon spectra; semiconductor superlattices; AlAs-AlP; AlAs/AlP superlattices; Raman scattering; confined optical phonons; lattice-mismatch; phonon spectra; short-period strained layer superlattices; strained layer superlattices; Capacitive sensors; Frequency; Gallium arsenide; Laser sintering; Optical buffering; Optical scattering; Optical sensors; Optical superlattices; Phonons; Raman scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037793

Filename

1037793