Title :
Multi-octave high efficiency power amplifier in GaAs technology
Author :
Cardente, C. ; Colantonio, P. ; Paolo, F. Di ; Giannini, F. ; Giofrè, R.
Author_Institution :
Electron. Eng. Dept., Univ. of Rome Tor Vergata, Rome
Abstract :
A 2-18 GHz MMIC power amplifier has been simulated in GaAs technology, based on a non-uniform distributed transmission line topology. The resulting circuit is a non-uniform distributed power amplifier (NDPA), which uses the power pHEMT process available at WIN semiconductor. The NDPA has been optimized for maximum power and efficiency, and it exhibits 1W (CW) output power, 27% medium drain efficiency and 23% medium PAE in the whole operating bandwidth. The resulting small signal gain is 10 dB. Stability analysis has been performed for internal loops also, resulting in an unconditionally stable amplifier. Considering the available results in literature for similar design, the proposed NDPA gives the highest performances in terms of efficiency and output power in the 2-18 GHz operating bandwidth.
Keywords :
III-V semiconductors; MMIC power amplifiers; UHF power amplifiers; distributed amplifiers; gallium arsenide; high electron mobility transistors; MMIC power amplifier; frequency 2 GHz to 18 GHz; gain 10 dB; medium drain efficiency; multioctave high efficiency power amplifier; nonuniform distributed transmission line topology; pHEMT process; stability analysis; Bandwidth; Circuit simulation; Distributed amplifiers; Distributed parameter circuits; Gallium arsenide; High power amplifiers; MMICs; Power amplifiers; Power generation; Power transmission lines; Broadband Amplifiers; Distributed Amplifiers; High Efficiency; MMICs; Power Amplifiers;
Conference_Titel :
Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008. Workshop on
Conference_Location :
Malaga
Print_ISBN :
978-1-4244-2645-4
Electronic_ISBN :
978-1-4244-2646-1
DOI :
10.1109/INMMIC.2008.4745736
