DocumentCode :
2321535
Title :
Development of FGM thermoelectric materials in Japan-the state of the art
Author :
Shiota, Ichiro ; Nishida, Isao A.
Author_Institution :
Dept, of Environ. Chem. Eng., Kogakuin Univ., Tokyo, Japan
fYear :
1997
fDate :
26-29 Aug 1997
Firstpage :
364
Lastpage :
370
Abstract :
Two times higher performance than a traditional thermoelectric material can be expected if the proper carrier concentration gradient is tailored to fit the temperature gradient. Performing a stepwise change of carrier concentration is also a method for practical application. That is a fundamental concept of energy converting functionally graded materials (FGM). It is essential to choose a proper material for each part to fit the temperature gradient. The proper material is a material with the proper carrier concentration and a proper compound to match the temperature of each part along the temperature gradient. Joining of these FGM materials and fitting electrodes with FGM interfaces are also core techniques, because thermal stress relaxation caused by the difference of thermal expansion coefficients is important at a high temperature. Joining two Bi2Te3 samples with carrier concentrations nc of 1.0 and 4.5×1025 was done by the ordinal soldering technique or diffusion bonding. The specific temperature range of the Seebeck coefficient α for the joined Bi2Te3 is extended from 50 to 100 K, and the value of α at the valley between the two materials with different nc was higher than both materials. The sintered n-type PbTe FGM with 3 layers of nc =3.51, 2.60 and 2.26×1025 was prepared by hot pressing. The effective maximum power Pmax of the FGM at the temperature difference of ΔT=310 K is 150 Wm/m2 and is about 7% larger than that of the layer with nc=3.51×10 25 whose Pmax is the greatest in all layers
Keywords :
IV-VI semiconductors; Seebeck effect; bismuth compounds; carrier density; hot pressing; joining processes; lead compounds; reviews; semiconductor materials; sintering; soldering; stress relaxation; thermal expansion; thermal stresses; thermoelectric power; Bi2Te3; PbTe; Seebeck coefficient; carrier concentration gradient; diffusion bonding; effective maximum power; electrodes; energy conversion; figure-of-merit; functionally graded materials; hot pressing; interfaces; joining; ordinal soldering; sintered n-type PbTe; temperature gradient; temperature range; thermal expansion coefficients; thermal stress relaxation; thermoelectric materials; Bismuth; Diffusion bonding; Electrodes; Joining materials; Soldering; Tellurium; Temperature; Thermal expansion; Thermal stresses; Thermoelectricity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
Conference_Location :
Dresden
ISSN :
1094-2734
Print_ISBN :
0-7803-4057-4
Type :
conf
DOI :
10.1109/ICT.1997.667154
Filename :
667154
Link To Document :
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