Title :
Theoretical study of In surface kinetics during MBE growth of InGaAs and InGaN
Author :
Stanley, Irena ; Coleiny, Golshan ; Venkat, Rama
Author_Institution :
Dept. of Electr. & Comput. Eng., Nevada Univ., Las Vegas, NV, USA
Abstract :
A rate equation model is employed to investigate the In desorption rate in InGaAs and In segregation rate in InGaN. The results, which are in good agreement with the experiment, suggest that the activation energies for In desorption in InGaAs from the physisorbed layer of In and the surface of the crystal, are 0.18 eV and 2.6 eV, respectively and the activation energy for In segregation in InGaN is 2.9 eV.
Keywords :
III-V semiconductors; desorption; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; surface segregation; In; In desorption rate; In segregation rate; In surface kinetics; InGaAs; InGaN; MBE growth; activation energy; physisorbed layer; rate equation model; Equations; Indium gallium arsenide; Intelligent networks; Kinetic theory; Temperature dependence; Zinc;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037797
