MOMBE growth studies of GaN using metalorganic sources and N or NH/sub 3/

Author

Li, T. ; Campion, R.P. ; Foxon, C.T. ; Rushworth, S. ; Smith, L.

Author_Institution

Sch. of Phys. & Astron., Nottingham Univ., UK

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

143

Lastpage

144

Abstract

We have studied the MOMBE growth of GaN using a variety of metal-organic precursors including TMG, TEG and TIBG combined with atomic nitrogen from a plasma source or ammonia. The growth rate and morphology have been studied in-situ using optical reflectivity from the surface and the chemistry of the process has been investigated using in-situ mass spectrometry. Growth takes place in a custom designed system, which combines some of the features of CBE with other techniques more normally applied in Plasma assisted MOVPE. Details of the system have been published elsewhere. Due to the special geometry, growth takes place under molecular flow conditions to minimise gas phase interactions.

Keywords

III-V semiconductors; chemical beam epitaxial growth; crystal morphology; gallium compounds; mass spectroscopic chemical analysis; reflectivity; semiconductor epitaxial layers; semiconductor growth; surface chemistry; wide band gap semiconductors; GaN; MOMBE growth; N; NH/sub 3/; TEG; TIBG; TMG; atomic nitrogen; chemistry; gas phase interactions; growth rate; in-situ mass spectrometry; metal-organic precursors; metalorganic sources; molecular flow conditions; morphology; optical reflectivity; plasma source; surface; Atom optics; Atomic measurements; Epitaxial growth; Gallium nitride; Mass spectroscopy; Nitrogen; Plasma chemistry; Plasma sources; Reflectivity; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037800

Filename

1037800