Title :
Critical thickness of GaAs/sub (1-x)/N/sub x/ and In/sub y/Ga/sub (1-y)/As/sub (1-x)/N/sub x/ MQW structures
Author :
Mussler, G. ; Ploog, K.H.
Author_Institution :
Paul-Drude-Inst. fur Festkorperelektronik, Berlin, Germany
Abstract :
We have studied the critical thickness of 10-stacked InGaAsN/GaAs MQWs. Samples were grown on GaAs substrates by Solid Source Molecular Beam Epitaxy at a substrate temperature of 450/spl deg/C; nitrogen was supplied by an rf-plasma source. All samples were capped by a GaAs layer.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; interface structure; molecular beam epitaxial growth; plasma deposition; semiconductor growth; semiconductor quantum wells; semiconductor superlattices; 450 degC; GaAs; GaAs layer; GaAs substrates; GaAs/sub (1-x)/N/sub x/; In/sub y/Ga/sub (1-y)/As/sub (1-x)/N/sub x/; MQW structures; critical thickness; rf-plasma source; solid source molecular beam epitaxy; substrate temperature; Gallium arsenide; Molecular beam epitaxial growth; Nitrogen; Quantum well devices; Rough surfaces; Solids; Substrates; Surface roughness; Temperature; X-ray scattering;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037801
