Modelling of temperature and dispersion effects in MESFET and HEMT transistors

In this paper, an accurate technique to model temperature, bias, and frequency dispersion effects in MESFET and HEMT transistors is presented. The approach is based on a single drain to source current source I _ds nonlinear model. Pulsed I/V characteristics measurements are used to model bias and frequency dispersion effects while temperature is directly implemented in the I _ds equation. Model parameters extraction strategy is simple, being based just on a few measurements. The approach validity is verified by comparing the simulated and measured I/V characteristics of the device tested under continuous and pulsed excitation. Large-signal simulation results show that the model can efficiently predict the output power under different bias and temperature conditions.