Title :
Modelling of temperature and dispersion effects in MESFET and HEMT transistors
Author :
Chaibi, M. ; Fernández, T. ; Tellez, J.R. ; Tazón, A. ; Aghoutane, M.
Author_Institution :
Dept. of Commun. Eng., Univ. of Cantabria, Santander
Abstract :
In this paper, an accurate technique to model temperature, bias, and frequency dispersion effects in MESFET and HEMT transistors is presented. The approach is based on a single drain to source current source I ds nonlinear model. Pulsed I/V characteristics measurements are used to model bias and frequency dispersion effects while temperature is directly implemented in the I ds equation. Model parameters extraction strategy is simple, being based just on a few measurements. The approach validity is verified by comparing the simulated and measured I/V characteristics of the device tested under continuous and pulsed excitation. Large-signal simulation results show that the model can efficiently predict the output power under different bias and temperature conditions.
Keywords :
Schottky gate field effect transistors; constant current sources; high electron mobility transistors; thermal analysis; HEMT transistors; MESFET transistors; bias dispersion effects; drain to source current source; frequency dispersion effects; model parameters extraction; nonlinear model; pulsed I/V characteristics measurements; temperature dispersion effects; temperature effects; Dispersion; Frequency measurement; HEMTs; MESFETs; Nonlinear equations; Parameter extraction; Predictive models; Pulse measurements; Temperature; Testing; Bias and frequency dispersion effects; pulse measurements; temperature effects;
Conference_Titel :
Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008. Workshop on
Conference_Location :
Malaga
Print_ISBN :
978-1-4244-2645-4
Electronic_ISBN :
978-1-4244-2646-1
DOI :
10.1109/INMMIC.2008.4745745
