Thermoelectric properties of segmented Pb-Te systems with graded carrier concentrations

Author

Shinohara, Y. ; Imai, Y. ; Isoda, Y. ; Nishida, I.A. ; Kaibe, H.T. ; Shiota, I.

Author_Institution

Nat. Inst. for Metals, Sengen, Japan

fYear

1997

fDate

26-29 Aug 1997

Firstpage

386

Lastpage

389

Abstract

Thermoelectric properties have been investigated on n-type PbTe material composed of 2 segments with different electron concentrations ne. The 2-segment material was prepared by liquid state diffusion bonding of two kinds of solidified ingots. ne of the ingots were 3×10²⁴ and 6×10²⁵/m³. The ingot of 3×10²⁴/m³ had higher power factor below 500 K, while the ingot of 6×10²⁵/m³ had higher factor above 500 K. The ingot with higher ne was for higher temperature use. When the temperature difference was given with the jointed interface of more than 450 K, the 2-segment material was found to give higher maximum power than the original ingots. From these results, the segmentation with graded ne is effective in improving the power generating performance of n-type PbTe

Keywords

IV-VI semiconductors; electron density; lead compounds; thermoelectric conversion; thermoelectric power; wafer bonding; 2-segment material; 450 to 500 K; PbTe; electron concentrations; graded carrier concentrations; jointed interface; liquid state diffusion bonding; n-type PbTe material; power factor; power generating performance; segmented Pb-Te systems; temperature difference; thermoelectric properties; Conducting materials; Electric resistance; Electrical resistance measurement; Electrons; Joining materials; Resistance heating; Temperature dependence; Thermal conductivity; Thermal resistance; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on

Conference_Location

Dresden

ISSN

1094-2734

Print_ISBN

0-7803-4057-4

Type

conf

DOI

10.1109/ICT.1997.667159

Filename

667159