Title :
Indium surface segregation in InGaN/GaN quantum wells
Author :
Dussaigne, A. ; Damilano, B. ; Grandjean, N. ; Massies, J.
Author_Institution :
Centre de Recherche sur l´´Hetero-Epitaxie et ses Applications, CNRS, Valbonne, France
Abstract :
InGaN/GaN quantum wells (QWs) are very efficient visible light emitters in the blue-green wavelength range. However, the external quantum efficiency of InGaN based light emitting diodes (LEDs) decreases at longer wavelengths. This is mainly due to the presence of a very large piezoelectric field that strongly reduces the oscillator strength via a giant quantum confined Stark effect (QCSE). Another consequence of this QCSE is to increase the sensitivity of the electron and hole wave functions to the interface potential profiles. In the present paper, we investigate both experimentally and theoretically the influence of In surface segregation on InGaN/GaN QW properties.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; molecular beam epitaxial growth; oscillator strengths; piezoelectric semiconductors; quantum confined Stark effect; reflection high energy electron diffraction; semiconductor growth; semiconductor quantum wells; surface segregation; wide band gap semiconductors; InGaN-GaN; InGaN/GaN quantum wells; LEDs; QCSE; QWs; RHEED intensity oscillations; blue-green wavelength range; electron wave functions; external quantum efficiency; giant quantum confined Stark effect; hole wave functions; indium surface segregation; interface potential profiles; molecular beam epitaxy; oscillator strength; piezoelectric field; reflection high energy electron diffraction; visible light emitters; Charge carrier processes; Gallium nitride; Indium; Light emitting diodes; Molecular beam epitaxial growth; Oscillators; Potential well; Shape; Stark effect; Wave functions;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037804
