DocumentCode :
2321759
Title :
The role of substrate for transport in graphene
Author :
Ferry, David K.
Author_Institution :
Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA
fYear :
2012
fDate :
16-19 Oct. 2012
Firstpage :
43
Lastpage :
48
Abstract :
We study the mobility and high field velocity in graphene placed upon various substrates, such as BN, SiC, or SiO2. The transport is subject to the intrinsic phonons in graphene, as well as flexural modes, but it is the remote polar modes from the substrate and impurities sited between the substrate layer and the graphene that dominate the mobility and velocity.
Keywords :
carrier mobility; graphene; phonons; BN; C; SiC; SiO2; carrier mobility; flexural modes; graphene transport; high field velocity; impurities; intrinsic phonons; polar modes; substrate layer; graphene; mobility; velocity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology Materials and Devices Conference (NMDC), 2012 IEEE
Conference_Location :
Waikiki Beach, HI
Print_ISBN :
978-1-4673-2871-5
Type :
conf
DOI :
10.1109/NMDC.2012.6527575
Filename :
6527575
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2321759
بازگشت