• DocumentCode
    2321759
  • Title

    The role of substrate for transport in graphene

  • Author

    Ferry, David K.

  • Author_Institution
    Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA
  • fYear
    2012
  • fDate
    16-19 Oct. 2012
  • Firstpage
    43
  • Lastpage
    48
  • Abstract
    We study the mobility and high field velocity in graphene placed upon various substrates, such as BN, SiC, or SiO2. The transport is subject to the intrinsic phonons in graphene, as well as flexural modes, but it is the remote polar modes from the substrate and impurities sited between the substrate layer and the graphene that dominate the mobility and velocity.
  • Keywords
    carrier mobility; graphene; phonons; BN; C; SiC; SiO2; carrier mobility; flexural modes; graphene transport; high field velocity; impurities; intrinsic phonons; polar modes; substrate layer; graphene; mobility; velocity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology Materials and Devices Conference (NMDC), 2012 IEEE
  • Conference_Location
    Waikiki Beach, HI
  • Print_ISBN
    978-1-4673-2871-5
  • Type

    conf

  • DOI
    10.1109/NMDC.2012.6527575
  • Filename
    6527575
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2321759