Title :
Nanofabrication of heavily carbon doped p-type GaAs by atomic force microscope nano-oxidation process and its application to single hole transistors
Author :
Matsuzaki, Yuichi ; Yamada, Akira ; Konagai, Makoto
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Abstract :
Scanning probe microscopes (SPMs), such as scanning tunneling microscopes (STMs) and atomic force microscopes (AFMs), are now routinely used as tools of not only observing surfaces but also fabricating nanoscale structures, by means of tip-induced oxidation of localized regions. In this study, we successfully oxidized heavily carbon doped p-type GaAs films by AFM nano-oxidation process and applied them to realize single hole transistors (SHTs).
Keywords :
III-V semiconductors; atomic force microscopy; carbon; gallium arsenide; heavily doped semiconductors; nanotechnology; oxidation; single electron transistors; AFM nano-oxidation process; GaAs:C; SHTs; atomic force microscope nano-oxidation process; atomic force microscopes; heavily carbon doped p-type GaAs; localized regions; nanofabrication; nanoscale structures; scanning probe microscopes; scanning tunneling microscopes; single hole transistors; tip-induced oxidation; Atomic force microscopy; Current measurement; Gallium arsenide; Molecular beam epitaxial growth; Nanofabrication; Oxidation; Scanning electron microscopy; Temperature; Transistors; Voltage;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037806
