Title :
Antimony segregation in the oxidation of strained AlAsSb interlayers
Author :
Andrews, A.M. ; Speck, J.S.
Author_Institution :
Dept. of Mater., California Univ., Santa Barbara, CA, USA
Abstract :
Lateral wet oxidation of AlAs/sub 1-x/Sb/sub x/ compounds is of crucial importance to the fabrication of high-efficiency electronic devices on InP substrates. Lateral oxidation has proved essential in vertical-cavity surface emitting lasers (VCSELs). A combined optical and electrical aperture is created by partially oxidizing the epilayer, reducing losses at the surface and improving the lasing efficiency. Also, the oxidation of the underlying material below transistors enables oxide gate insulators and device isolation.
Keywords :
III-V semiconductors; aluminium compounds; arsenic compounds; insulated gate field effect transistors; semiconductor epitaxial layers; surface emitting lasers; surface segregation; AlAs/sub 1-x/Sb/sub x/; InP; VCSEL; epilayer; high-efficiency electronic devices; lateral wet oxidation; oxide gate insulators; segregation; transistors; vertical-cavity surface emitting lasers; Apertures; Indium phosphide; Insulation; Optical device fabrication; Optical losses; Optical materials; Oxidation; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037819
