Title :
Controlled n-type doping of antimonide/arsenide heterostructures using GaTe
Author :
Bennett, Brian R. ; Magno, R. ; Ikossi, Kiki ; Papanicolaou, N. ; Boos, J.B. ; Shanabrook, B.V.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
The authors used stoichiometric GaTe in Riber 32P and 21T systems. After outgassing at 425/spl deg/C, they obtained higher-than-expected carrier concentrations: 10/sup 18//cm/sup 3/ at T/sub GaTe/=350/spl deg/C. Following additional outgassing at 500/spl deg/C, the carrier densities were at lower levels and reproducible. This is consistent with the evaporation of elemental Te or Ga/sub 2/Te/sub 3/ during the initial growth and outgassing. Similar densities were observed for GaAs, AlSb, and GaSb. The growth temperatures for the GaAs layers were 550-600/spl deg/C, compared to 500/spl deg/C and 450/spl deg/C for AlSb and GaSb, respectively. Undoped GaAs layers grown after the use of GaTe exhibited a p-type background of 10/sup 14//cm/sup 3/, indicating negligible Te contamination due to a memory effect.
Keywords :
III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; gallium compounds; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; tellurium; 350 degC; 425 degC; 450 degC; 500 degC; 550 degC; 600 degC; AlSb:Te; GaAs:Te; GaSb:Te; MBE systems; Riber 21T system; Riber 32P system; antimonide/arsenide heterostructures; carrier concentration; controlled n-type doping; growth temperature; outgassing; stoichiometric GaTe; Charge carrier density; Diodes; FETs; Gallium arsenide; Laboratories; Optoelectronic devices; Semiconductor device doping; Semiconductor superlattices; Tellurium; Temperature;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037820
