Title :
Growth of shallow InAs HEMTs with metamorphic buffer
Author :
Heyn, Ch. ; Mendach, S. ; Schnüll, S. ; Löhr, S. ; Beyer, S. ; Hansen, W.
Author_Institution :
Inst. fur Angewandte Phys. und Zentrum fur Mikrostrukturforschung, Hamburg, Germany
Abstract :
Shallow InAs inserted-channel heterostructures are fabricated on GaAs with electron system only 19.5 nm below the surface and mobility of 160000 cm/sup 2//Vs. An additional superlattice grown prior to the metamorphic buffer is established for defect reduction.
Keywords :
III-V semiconductors; carrier mobility; dislocations; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; transmission electron microscopy; GaAs; GaAs substrate; HEMT; InAs; MBE; TEM; defect reduction; dislocations; electron mobility; metamorphic buffer; shallow inserted-channel heterostructure; superlattice; transmission electron microscopy; Charge carrier density; Doping; Electron mobility; Gallium arsenide; HEMTs; Impurities; Lighting; MODFETs; Superlattices; Surface resistance;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037821
